IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor LTE Advanced RISC Architecture High Endurance

Advanced RISC Architecture High Endurance Non-volatile Memory Segments

Compatible Battery 32650 Material ABS Size 68x34x8

and it comes into a learning state

10A at 125V AC Switching Mode ON-OFF Structure DPST Colour Red Number of Pins 4 Dimension (LxWxH) 21 x 15 x 28 mm Material Copper

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IXBH5N160G 1600V, 5A Monolithic Bipolar MOS Transistor LTE Advanced RISC Architecture High EnduranceIt is a High Voltage BIMOSFET that can replace high voltage MOSFETs because of its much lower voltage drop and control that is compatible with MOSFETs. Fast switching for high frequency operation, a gate voltage of 10V, and reverse conduction capability Furthermore, this comes in the industry standard TO 220AB TO 247AD epoxy satisfies the UL94V 0 box. Switched mode power supplies, DC DC converters, X ray, and laser generators. resonant converters and